Very Fast, Low Activation Voltage Nems Switch
ID U-4746
Category Hardware, Circuits, & Sensors
Subcategory Semiconductors
Researchers
Brief Summary
A fast, low voltage NEMS switch that can be configured for use with CMOS, FETs, diodes and other electronics to produce logic gates, circuits, controllers and processors for harsh environments.
Problem Statement
Micro-Electro-Mechanical Systems (MEMS) and Nano-Electro-Mechanical System (NEMS) Switches can require in excess of 5 volts to be activated and are usually slow, with response times limited to 100s to 10s of nano-seconds.
Technology Description
Researchers at the University of Utah have developed a NEMS device that uses a cantilevered beam supported by a base. The cantilevered beam is constructed with a nanoscale gap separating the cantilevered beam from an electrical structure. A low voltage applied to the cantilevered beam causes the beam to bend and make contact with the electrical structure, enabling high switching speeds.
Stage of Development
Benchtop Prototype
Benefit
- Less than 10 ns switching time.
- Activation voltage between 0.5V and 2V.
- Less than 10 ohms resistance.
- >600° C operation.
- Small footprint.
Contact Info
Jonathan Tyler
801-587-0515
jonathan.tyler@utah.edu
