Maskless Nanoimprint Lithography
ID U-5064
Category Hardware, Circuits, & Sensors
Subcategory Semiconductors
Researchers
Brief Summary
Create Nanoimprint Lithography template using electromagnetic radiation
Problem Statement
Challenges associated with nanoimprint lithography (NIL) are the fabrication and durability of the template and high-resolution template patterning can be very slow. Photolithography is limited in resolution to relatively large features, greater than approximately 200 nm feature sizes. Physical contacting of the template with the resist layer during imprinting accelerates the wear of imprint templates compared to other types of lithographic masks.
Technology Description
A new approach to nanoimprint lithography NIL has been developed at the University of Utah. This new technology overcomes the NIL limitations by using maskless NIL with the template being reconfigurable using electromagnetic radiation in a predetermined pattern to form a nanoimprint lithography template in the mass transport layer. This invention exploits the reversible generation of a template using the mass-transport characteristics of photochromatic molecules.
Stage of Development
Benchtop Prototype
Benefit
- High-throughput fabrication of templates
- Nanoscale patterning over macroscopic areas
- Process is reversible
- Avoid many of the problems with template wear
IP
Publication Number: US-2015-0036117-A1
Patent Title: Maskless Nanoimprint LIthography
Jurisdiction/Country: United States
Application Type: Non-Provisional
Contact Info
Jonathan Tyler
801-587-0515
jonathan.tyler@utah.edu