Maskless Nanoimprint Lithography

ID U-5064

Category Hardware, Circuits, & Sensors

Subcategory Semiconductors

Researchers
Rajesh Menon Nicole Brimhall
Brief Summary

Create Nanoimprint Lithography template using electromagnetic radiation

Problem Statement

Challenges associated with nanoimprint lithography (NIL) are the fabrication and durability of the template and high-resolution template patterning can be very slow. Photolithography is limited in resolution to relatively large features, greater than approximately 200 nm feature sizes. Physical contacting of the template with the resist layer during imprinting accelerates the wear of imprint templates compared to other types of lithographic masks.

Technology Description

A new approach to nanoimprint lithography NIL has been developed at the University of Utah. This new technology overcomes the NIL limitations by using maskless NIL with the template being reconfigurable using electromagnetic radiation in a predetermined pattern to form a nanoimprint lithography template in the mass transport layer. This invention exploits the reversible generation of a template using the mass-transport characteristics of photochromatic molecules.

Stage of Development

Benchtop Prototype

Benefit

  • High-throughput fabrication of templates
  • Nanoscale patterning over macroscopic areas
  • Process is reversible
  • Avoid many of the problems with template wear

IP

Publication Number: US-2015-0036117-A1
Patent Title: Maskless Nanoimprint LIthography
Jurisdiction/Country: United States
Application Type: Non-Provisional

Contact Info

Jonathan Tyler
801-587-0515
jonathan.tyler@utah.edu

Questions?

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