Field effect transistors (FETs) are commonly used in circuit boards to amplify or switch electronic signals. Metal-oxide-semiconductor FETs (MOSFETs) are the most common field effect transistor and use electrons to carry currents. However, MOSFETs are highly susceptible to damage through static electricity and fail to work at high temperatures.

University researchers have developed a metal-oxide plasma field effect transistor (MOPFET) that can operate at high temperatures and in ionizing radiation. This MOPFET device utilizes ionized gases as charge carriers, which are unaffected by ionizing radiation and have increased operation efficiency in such conditions. As a result, MOPFETs can be used in nuclear power stations, outer space, engines, and other hightemperature/ ionizing radiation applications.